




宽禁带半导体材料:碳化硅(SiC) MOSFET
WBG semiconductor material: Silicon Carbide MOSFET
结构紧凑
Compact design
高功率密度
High power density
低杂散电感设计
Low inductive design
集成温度传感器NTC
Integrated NTC temperature sensor
电路拓扑 circuit topology | 半桥 Half-bridge |
VDss | 1200V |
RDS(ON)-typ | 6 / 11 mΩ |
Tvj(op) | -55℃~175℃ |
Chip Material | SiC |

高效转换器
Highefficiency converter/inverter
太阳能应用
Solar applications
电动汽车充电桩
Electrical vehicle charging stations
工业电源
Industrial power